Abstract
In this present work, Pristine and 10 at.% of In-doped ZrO2thin films were deposited by spray pyrolysis technique at optimized substrate temperature [Ts=450°C]. The greater the proportion of Indium ion dopant, significantly influences the structural, optical, morphological, and electrical properties of deposit thin films. The deposited thin films were characterized with XRD, UV-Vis, PL, HR-TEM with EDAX, and I-V characterization Studies. The crystallinity of Zirconium dioxide thin film was improved and size of crystals were decreased by Indium ion substitution. Optical study revealed that the film's optical transmittance enhanced from 80.3 percent to 86.5% as a result of the dopant. The energy bandgap increased at 4.93eV - 4.57eV, systematically. HR-TEM studies show the homogeneous particle distribution and denser surface texture at 22nm and 19nm of average particle agglomerations. The study of PL emission shows an increase in intensity on the blue emission band with enriched crystalline quality. The conductivity of the ZrO2 was higher affected by Indium ion may result in increased conductivity, with low resistivity property.
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