Abstract
SiC device is known by its outstanding property, such as low on resistance and short switching time for high voltage device. Recently, the SiC device technology is rapidly progressed; however the device performance in a power conversion circuit has not been clearly shown. The purpose of this work is to apply the SiC device in a DC-DC converter and to evaluate the power loss and efficiency of the converter for high switching frequency operation; such as 200 kHz. The electrical characteristics of Si IGBT module are compared with the SiC device. The significant differences are observed especially for high switching frequency operation, and SiC device shows suitable characteristics for high frequency operation than conventional Si power module.
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