Abstract
The electrical properties of Pb(Zr, Ti)O 3 thin films annealed by Pt thin film heater were investigated. By the thin film heater, we successfully crystallized Pb(Zr, Ti)O 3 thin films at a high temperature above 750 °C in a few seconds. The thin film heater has some advantages, such as a low thermal budget, little Pb-loss and enhanced surface morphology compared with the conventional furnace because it has a fast heating rate. The electrical properties of the Pb(Zr, Ti)O 3 thin film crystallized by thin film heater improved considerably comparing to those crystallized in conventional furnace. The remanent polarization, breakdown field, and leakage current density measured to be 22.7 μC/cm 2, 853 kV/cm, and 6.93 × 10 −7 A/cm 2, respectively.
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