Abstract
The electrical and optical properties of InGaZnO (IGZO) thin films were studied in the research. It was found that all the films deposited at room temperature exhibit amorphous structures. A better film quality was obtained at a lower pressure with sputtering ambiance. The RF power toward the IZO target was constant at 125 W; the RF power toward the Ga2O3 target varied from 0 to 70 W. A best IGZO film with corresponding resistivity, carrier concentration, and mobility is 7.94 × 10−4 Ω-cm, 1.68 × 1020 cm−3, and 47 cm2/V-s, respectively. Due to the doping of gallium in the IGZO film, it led to a lower resistivity than that of the IZO film. A blue shift effect of the film was also observed in the doping of gallium to the IGZO film. The H2 plasma effects toward the IGZO were also observed.
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