Abstract
HBM-High Bandwidth Memory- has 128 GB/s band width and construction of stacked memory device with TSV –Through Silicon Via-. Stacked structure is basically composed of base die which has a logical circuit to control memory cell and 4 high stacked memory devices. HBM package size is around 5 mm × 7mm, smallest form factor and attached to the Si interposer by micro bump joining. Also stacked DRAM dies have 20 μm diameter micro-bumps and underfill material for supporting mechanical strength of stacked HBM structure. In this study, we investigate the stress evolution of underfill material to the thinned die of HBM and also verify the environmental reliability of HBM.
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