A Study On The Dielectric Intrinsic Breakdown Specification

Abstract

With the introduction of ultra-thin gate oxides (GOXs) and low-k dielectrics into IC manufacturing, some new dielectric failure mechanisms arisen. These changes make the evaluations of dielectric reliability more complex. We propose a new method to accurately define the dielectric intrinsic breakdown specification (Spec) of V-ramp (Voltage ramp) tests. Base on the physical failure process and statistical correlation between V-ramp and TDDB (Time Dependent Dielectric Breakdown) tests, the applicability of our proposed method can be further extended to ultra-thin GOX and low-k dielectrics. A quicker and more accurate judgment on dielectric reliability can be achieved by using our method to better assess dielectric reliability risk.