A study on the complex dielectric (ε*)/electric-modulus (M*)/impedance (Z*), tangent-loss (tanδ), and ac conductivity (σac) of the Al/(S:DLC)/p-Si/Au (MIS)-type Schottky structures in a wide range of frequency and voltage at room temperature (RT)

Abstract

In this work, the Al/(S:DLC)/p-Si/Au Schottky structures were fabricated, and the real and imaginary parts of complex-permittivity (ε*), complex electric-modulus (M*), complex-impedance (Z*), loss-tangent (δ), electrical-conductivity (σac), and phase-angle (θ) were investigated in the wide-frequency-range of 2 kHz-2 MHz between −3.0V/4.0V. All these-factors were found to be heavily dependent on frequency and voltage because of the surface states (Nss), Maxwell-Wagner polarization, and interlayer. The voltage-dependent profile of tanδ and M″ exhibits a significant shift in peak location towards forward-bias voltages as frequency increases due to the relaxation process of the Nss and dipole polarization. The ε′ was found to be 571.81 (at 2 kHz) and 59.72 (at 1 MHz). The value of ε′, even at 2 kHz, is about 151.5 times higher than the maximum value of traditional SiO2 (3.8) insulators, and hence, it can be successfully used instead of insulators to store more electric charges or energy.