Year-end Sale % OFF 
Abstract
The CdZnTe array detector is a new type of semiconductor detector being rapidly developed in recent years. It possesses a high spatial resolution and a high energy resolution, and it can work at room temperatures. This paper describes the physical properties and working principle of the CdZnTe array detector, as well as the manufacturing technology, including the chip pretreatment, passivation, ohmic electrode preparation, array template selection, and array packaging technology (micro-interconnection). For evaluating the perfor-mance of the detector, the authors have developed successfully a 4 pixel×4 pixel CdZnTe array and an 8 pixel×8 pixel CdZnTe array (with the thicknesses of 5mm and 2mm, the pixel size of 2 mm×2mm, and the gaps of 0.15mm and 0.2mm, respectively) in cooperation with the partner. A multi-channel electronic readout system based on the ASIC (Application Specific Integrated Circuit) chip is devel-oped independently for the charge measurement of the 4 pixel×4 pixel CdZnTe array. The energy spectra and corresponding energy resolutions of the 16 pixels are obtained with the 137Cs radiative source, among them the best resolution is 4.8%@662 kev.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
