Abstract
Mg doping response was studied for GaN metalorganic chemical vapor deposition (MOCVD) for the first time. The delay time was observed between Mg atom incorporation into the growing layer and supplying Mg source to the reactor, in spite of the quick response for doping turn off. The delay time increased steeply with decreasing Mg source flow rate. The delay was considered to originate from absorption of Mg source molecules to the reactor wall (memory effect). A large Mg sticking coefficient and the existence of a saturated amount of Mg source molecules adsorbed to the reactor wall were suggested. Reducing the memory effect by purging the inlet nozzle of the reactor with the mixed source gas to be used to grow next layer during growth interruption, the doping responce was improved significantly and Mg concentration was controlled down to 5 x 10 16 cum -3.
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