Abstract
In this work, Y2O3–Al2O3 dielectrics were prepared and used in ZnO thin film transistor as gate insulators. The Y2O3 film prepared by the sol–gel method has many surface defects, resulting in a high density of interface states with the active layer in TFT, which then leads to poor stability of the devices. We modified it by atomic layer deposition (ALD) technology that deposited a thin Al2O3 film on the surface of a Y2O3 dielectric layer, and finally fabricated a TFT device with ZnO as the active layer by ALD. The electrical performance and bias stability of the ZnO TFT with a Y2O3–Al2O3 laminated dielectric layer were greatly improved, the subthreshold swing was reduced from 147 to 88 mV/decade, the on/off-state current ratio was increased from 4.24 × 106 to 4.16 × 108, and the threshold voltage shift was reduced from 1.4 to 0.7 V after a 5-V gate was is applied for 800 s.
Highlights
In recent years, metal oxide thin film transistors (TFT) have attracted a lot of attention due to their high transmittance, high current switching ratio, insensitivity to visible light, and technical advantages, such as solution processing and low temperature deposition
Among the various metal oxide TFTs, transparent ZnO-based TFTs have been extensively studied as a replacement for silicon-based TFTs in large area electronic displays [3,4,5]
As an important part of TFT, the gate dielectric layer plays an important role in the performance of TFT
Summary
Metal oxide thin film transistors (TFT) have attracted a lot of attention due to their high transmittance, high current switching ratio, insensitivity to visible light, and technical advantages, such as solution processing and low temperature deposition They are widely used in flat panel displays and large-scale integrated circuits and, show a huge application value [1,2]. The Y2O3 film prepared by the sol–gel method has many surface defects, resulting in a high density of interface states with the active layer in TFT, leading to poor stability of the devices We modified it by atomic layer deposition (ALD) technology that deposited a thin Al2O3 film on the surface of the Y2O3 dielectric layer. The performance of ZnO–Y2O3 (named ‘device A’) and ZnO–Y2O3–ALD and Al2O3 (named ‘device B’) TFT were examined to confirm the expected performance of Y2O3 and the effect of ALD Al2O3
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