Abstract
Polycrystalline PbTe samples have been implanted by Sn + ion at an energy of 200 KeV with doses of 6×10 16 and 1×10 17 ions/cm 2 in order to create a Pb 1− x Sn x Te layer with higher carrier concentration. The thermoelectric properties of the implanted and unimplanted samples have been measured at room temperature. The effects of Sn + ion implantation on the structure of PbTe were investigated using XRD and XPS. The results show that Pb 1− x Sn x Te phase has been created in the surface layer after Sn + ion implantation, which can modify the thermoelectric properties of PbTe.
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