Abstract
Microwave hybrid heating (MHH) is a novel method to enhance ceramic sintering at high temperatures. The heating mechanism by MHH involves two directions of heat transfer for materials: microwaves heat the sample from the inside out, while the susceptor provides conventional heating from the outside. This unique heating mechanism offers several advantages, including uniform heating, rapid sintering, and enhanced microstructure and properties of materials. This study investigates the configuration of silicon carbide (SiC) susceptors for microwave hybrid heating. The microwave oven (multi-mode, 2.45 GHz, 1.2 kW) was modified with a ceramic insulator housing to maintain the temperature in the chamber. The effects of different configurations of SiC susceptors and microwave powers on the heating rate and maximum temperature were investigated. SiC susceptor plates were placed in the microwave oven using 3 different configurations, and for each condition, the microwave power was varied at 40, 60, 80, and 100% (480, 720, 960, and 1,200 W). The temperature in the microwave chamber was recorded until it reached 900°C or after 30 min of heating. Using two plates of SiC susceptor at 100 % power resulted in the highest heating rate of 62°C/min to reach 925°C. The results of this study offer guidance for the selection of appropriate heating conditions for individual ceramic materials, which can lead to more effective sintering processes.
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