Abstract
This study was undertaken to examine the possibility to apply semiconductive In2O3 fine particles doped with SnO2 to an electrically conductive component in the semiconductive glass composites, such as IC-thick film resistors. The effects of the chemical composition of the glass matrix on the microstructure and electrical conductivity of the semiconductive glass composites, and on the solubility of In2O3 in the glass matrix have been investigated and discussed. It has been found that the electrical conductivity of these composites gets high when the solubility of In2O3 in the glass matrix is high and the microstructure is densely sintered and homogeneous. Also, the formation of InBO3 has been found to occur during firing and inhibit the densification of the composites. Thus, as the amount of InBO3 formed gets larger, the connectivity of ITO particles in the microstructure which determines the electrical conduction paths in the composites becomes poorer. From these experimental results, a feasibility to apply the semiconductive In2O3 fine particles to the conductive component in the semiconductive glass composites is assessed to be to suitably select the chemical composition of the matrix glasses so as to increase the solubility of In2O3 in the glass matrix and to minimize the formation of InBO3.
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