A study on photoreflectance characteristics of interface effect in Si delta-doped Al0.24Ga0.76As/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor structures

J.I Yu,S.J Lee,I.H Bae

doi:10.1016/j.physe.2004.06.050

A study on photoreflectance characteristics of interface effect in Si delta-doped Al0.24Ga0.76As/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor structures

J.I Yu, S.J Lee + Show 1 more

https://doi.org/10.1016/j.physe.2004.06.050

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Journal: Physica. E, Low-dimensional systems & nanostructures	Publication Date: Sep 3, 2004
Citations: 2

Affiliation: Yeungnam University

#High Electron Mobility Transistor Structure #Pseudomorphic High Electron Mobility Transistor + Show 8 more

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Abstract

We study the photoreflectance (PR) characteristics of interface effect in Si delta-doped Al0.24Ga0.76As/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor (pHEMT) structure. We observed weak 11H transition from the PR spectrum of pHEMT, and the room- and low-temperature PR spectra exhibited Franze–Keldysh oscillations at energies above the GaAs band gap. From the period of these oscillations, the electric feild at the Al0.24Ga0.76As/In0.2Ga0.8As/GaAs interface was determined and behaviour decreasing with temperature was observed.

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