Abstract
In this study, a novel MEMS pressure-level sensor using contact-resistance change is presented. The resistance change results from a physical contact between a micropatterned switch array and a conductive diaphragm with an applied pressure. First, a concept and a working principle of the proposed pressure-level sensor are introduced and basic characteristics of the fabricated prototype sensor with serially connected resistors and electrodes are experimentally tested. Then, a new approach for linearity compensation of the proposed mechanism is analytically investigated with contact analysis results obtained by using commercial FEM tools, which is to control a pattern slope of the deposited ITO resistor. Finally, based on the obtained analysis results, a pressure-level sensor is refabricated and experiments including durability test are performed and discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
