Abstract
A deterioration mechanism of DC characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated around hollow cores that extend from micropipes in SiC substrates was studied. Various sizes of hollow cores were investigated to study the influence of size dependence. Prominent deterioration of the DC characteristics of HEMTs fabricated in the vicinity of hollow cores with a diameter of 5 μm was observed, while no major deterioration was observed for HEMTs fabricated around hollow cores whose diameters were 1.5 and 3 μm. Clear correlation between the size of hollow cores and free carrier densities at the peripheries of the cores was observed using micro-Raman imaging. The high density of free carriers around relatively large hollow cores causes deterioration of the DC characteristics of HEMTs fabricated in the vicinity of hollow cores. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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