Abstract
In this paper, we studied how the switching characteristics of a power conversion system could be improved using gallium nitride (GaN) devices. To this end, a circuit system applying GaN field effect transistors (FETs) was modeled to derive a mathematical differential equation, and the transfer function of the system was obtained through the modeled equation to propose the analysis model. The frequency response of the system where the GaN FET device was applied was analyzed through the proposed modeling circuit, and the method to compensate for characteristics of the system was proposed. The applied method and the proposed model were validated through the comparative analysis on the frequency responses before and after the frequency response. This study’s results were proposed that the problem occurring in systems with GaN FETs could be solved through this theoretical and systematic method.
Highlights
The development of silicon semiconductor devices has been steadily increasing over the last few decades
Since some 10 years ago, gallium nitride (GaN) technology has been spotlighted as representing next-generation power semiconductor devices that can replace silicon semiconductor devices
This study presented a model through which the system’s characteristics characteristics could be analyzed theoretically rather than by applying to a general low-pass filter to could beremove analyzed theoretically rather thanasbywas applying to a general low-pass filterand to blindly remove blindly high-frequency signals, attempted in previous studies, proposed the high-frequency signals, as was attempted in previous studies, and proposed the method of applying to method of applying to the optimal filter to the system by analyzing its frequency response the optimal filter to the system by analyzing its frequency response characteristics
Summary
The development of silicon semiconductor devices has been steadily increasing over the last few decades. GaN devices are suitable for using in high-density and high-power systems, and this can be accomplished with a much smaller size than that of a silicon semiconductor device in high-speed switching operations. Most studies have been focused on hardware improvements for GaN devices. Since studies havedepend been focused hardware improvements for GaNof devices. Overcome thisorlimitation, a study they do not lead to universal technical advancements To overcome this limitation, a study has has been proposed to remove input signal noise and resonance frequency signals by applying a noise been proposed input noiseresponse, and resonance frequency signals for by applying noise removal circuittotoremove improve the signal frequency thereby compensating the phasea delay removal circuit to improve the frequency response, thereby compensating for the phase delay through through software [8].
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