Abstract
AbstractIn a short‐wave (3 to 30 MHz) high‐power transmitter, the modulation section is fabricated with semiconductors, but the total semiconductor realization including the final‐stage PA is difficult and has not been accomplished to date. The authors' objective is to achieve total use of semiconductors for realization of a 100‐kW‐class short‐wave high‐power transmitter. An optimal power device (MOSFET) to obtain high efficiency is selected. In addition, a circuit for realization of high efficiency and a synthesis method for excellent linearity are proposed. In the short‐wave band, there is a problem of increased loss due to parasitic diodes for the digital‐processing AM modulation device used in the middle‐frequency range. It is shown that the method cannot be applied directly. Further, an optimum modulation format and a circuit configuration for realization of a short‐wave high‐efficiency AM transmitter are proposed. © 2007 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 90(3): 33–41, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecjb.20283
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