Abstract
The three‐step preheat‐treatment using oxidation has been investigated in order to develop an effective and sure gettering technique. In this technique the bulk oxidation‐induced stacking faults play a role of gettering sinks. The junction leakage failure of high‐speed bipolar devices was suppressed by this intrinsic gettering through complete elimination of epitaxial stacking faults. Furthermore, the intrinsic gettering was applied to a MOS image sensor and a dynamic RAM to improve their yield performance.
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