Abstract
The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. In this study, we review our recent study on the graphene–metal contact characteristics from the following viewpoints: (1) metal preparation method; (2) asymmetric conductance; (3) annealing effect; (4) interfaces impact.
Highlights
Graphene is a single atomic sheet of carbon atoms in a honeycomb lattice, where the carbon-carbon bonds in the plane are sp2 hybridized
We provide a study on the characteristics of graphene–metal contact from the perspectives of: (1) metal preparation method; (2) asymmetric conductance; (3) annealing effect; and (4) interface impact
In order to improve the performance of graphene–metal contact, the forming gas annealing (FGA)
Summary
Graphene is a single atomic sheet of carbon atoms in a honeycomb lattice, where the carbon-carbon bonds in the plane are sp hybridized. Its linear electronic dispersion relation results in a zero effective mass of the carrier with a high Fermi velocity. This material exhibits an extraordinarily high carrier mobility of more than 200,000 cm V−1s−1 [12]. We provide a study on the characteristics of graphene–metal contact from the perspectives of: (1) metal preparation method; (2) asymmetric conductance; (3) annealing effect; and (4) interface impact. These findings offer insightful information to achieve high performance graphene devices via process optimization
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