A study on electron‐wave filters using barrier height modulated multiple barrier structures

Abstract

AbstractThe one‐dimensional semiconductor multiple barrier structure playing a role of a filter for electron waves is important as a configuration to control the behavior of the electrons in electron‐wave devices. Recently, many theoretical and experimental reports on the subject have been presented. Since the electron‐wave filter characteristics are directly affected by the potential shape, it is important to systematically understand the relationship between the potential shape and the realizable characteristics so that desired characteristics can be realized. In this paper, the circuit‐theoretical design of a potential barrier height modulated electron‐wave filter is discussed. It is shown that an electron‐wave filter with a bandpass characteristic can be realized. Also, the designed electron‐wave filter is shown to be superior in terms of the transmission coefficients and group delay in the passband in comparison to the periodic multiple barrier structures. © 2003 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 86(9): 11–19, 2003; Published online in Wiley InterScience (www.interscience. wiley.com). DOI 10.1002/ecjb.10133