Abstract
This paper focuses on using high temperature operating capability of SiC power devices, which are packaged in power modules. A SiC Schottky barrier diode is mounted on an active metal brazed Si3N4 substrate as a heat resistive power module. The temperature dependency of electrical characteristics of the SiC device and thermal dynamics of the power module are modeled for numerical electro thermal analysis. The results of numerical analysis demonstrate high temperature operation of SiC device in the power module, which assumes less heat dissipation by simplified cooling system. The experimental results validate the numerical analysis results of the modeled SiC power module.
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