A study on electrical properties of silicon carbide power devices

Abstract

Silicon Carbide (SiC) devices have the characteristics of high voltage resistance, fast switching speed, high working frequency, small on-resistance, and high-temperature resistance, and have broad application prospects in high voltage and high-power occasions. However, the application of SiC is faced with the problems of high-frequency switching transient voltage, current overshoot, ringing, and short circuit protection. Based on the problems encountered in the application process of SiC power devices, the characteristics and drive protection technology of sic devices are studied in this paper. In this paper, the static characteristic parameters of SiC device are studied, the switching characteristic parameters are tested, the influence of parasitic inductance parameters on the switching characteristic is analyzed, and the design method of PCB Roche coil is analyzed, the anti-interference performance of loop winding turns is analyzed and the driver protection circuit is designed.