Abstract
In this paper the study of electrical characterization of Surface potential & Vth threshold-voltage model is developed for FD SOI MOSFET. The threshold voltage is important parameter in device design. Scaling of device has positive impact on device performance. The various parameters like thickness of silicon film, oxide layer, drain to source voltage plays a key role in improvement of device performance. Surface potential explain the distribution of applied potential throughout the channel. We also analyzed the effect of threshold voltage with various electrical parameters.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: International Journal of Engineering & Technology
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
