Abstract
In this paper, we have studied the influence of various dopants on oxygen vacancies (VOs) and VO-filaments formed in ZrO2 based resistive switching. The results show that both n-type and p-type dopants can decrease the formation energy of VO in insulator, compared with n-type dopants, p-type dopants can reduce the set voltage more effectively. However, the metallic VO-filament can be formed more easily in ZrO2 with appropriate n-type dopants. The results can help us to design the appropriate insulator in RRAM with different requirement.
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