A Study on Dominant Mechanism and Analytical Model of Low-Frequency Noise in FD-SOI pTFET

Abstract

The origin of low-frequency noise (LFN) properties and the accuracy of LFN model were demonstrated in a fully depleted silicon-on-insulator p-type tunneling field-effect transistor (pTFET). We demonstrated that the origin of LFN properties in pTFET can be deduced and analyzed via the current fluctuation induced by tunneling in the pTFET operation region. Since the trap sites near the tunneling junction contributed to LFN, pTFET must consider the tunneling junction characteristics and channel transportation influences. The tunneling path was not formed at low |VGS| and the carrier transport in pTFET crossed the energy band by Shockley-Read-Hall (SRH) generation-recombination or the trap-assisted tunneling (TAT) mechanism and not through band-to-band tunneling (BTBT). However, with the increase in |VGS|, the tunneling path was formed and the carriers could flow through the energy band by BTBT. The correlation between the simulated model data and experimental data was examined, confirming that the proposed small-signal model accurately represents noise in pTFETs.