Abstract
A new three-level boost converter with wide conversion ratio is proposed in this paper. The proposed converter has a high step-up voltage gain, common ground, low input current ripple, and low voltage stress on the semiconductor devices. The proposed converter is based on a three-level switched flying capacitor network and an integrated LC2D output network. The integrated LC2D output network reduces the voltage stress on the semiconductor devices and extends the voltage gain of the converter. Complete analysis of the proposed converter in continuous conduction mode (CCM) is given in this paper. A scaled-down laboratory setup was built with Gallium Nitride (GaN) transistors and Silicon Carbide (SiC) diodes to verify the theoretical analysis of the proposed converter.
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