Abstract
In this paper, we suggest a novel operation of a SOI MOSFET, varied threshold voltage MOSFET (VTMOS), which can work very well under ultra-low voltage(0.6 V and below) in VLSI circuits. Experiments show that the threshold voltage of the device varies with its gate voltage, which results in better performance than conventional SOI MOSFET (for example, larger drive current and lower leakage). We also provide two-dimensional (2-D) device simulation to perspective its operational principle.
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