Abstract
The results of a study of the preparation of epitaxial layers of indium phosphide on indium phosphide substrates by means of the PCl3-In-InP process are presented. The limitations of the process as discovered in this study are described. It is proposed that the major reaction species is phosphine and the unpredictable break-down of this compound, along with the presence of oxyhalides in the phosphorus trihalides, are the significant causes of the observed variation of the parameters of the epitaxial layers.
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