Abstract
The controlled synthesis of poly(styrene-block-trimethylstannylstyrene) has been accomplished. Thin films of the polymer were successfully oriented perpendicular to the substrate through use of neutral top and bottom coats to produce well-formed lamellae with the classical finger print pattern. Preliminary blanket etch studies show that the inclusion of tin into the block copolymer provides very high etch contrast for selective removal of the styrene block in both oxygen and fluorine plasma conditions. The etch rate of the tin polymer is significantly slower than that of thermal oxide under the conditions studied. Future work will be directed toward the synthesis of a sample with smaller pitch and to a study of the potential for use of organotin polymers for the patterning of fused silica imprint templates.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
