Abstract
Schottky barrier diodes and test samples for metallurgical studies have been prepared by e-gun evaporation of various thin metal films. We have characterized the diodes by the barrier height as determined from forward IV measurements. The concentration profiles of the elements have been investigated by 2 MeV He+ backscattering. In agreement with earlier investigations we have found the structures ⟨111⟩Si/Pd2Si/Al and ⟨111⟩Si/PtSi/Al to be electrically and metallurgically unstable upon annealing. Ti is shown to stabilize the barrier height by acting as a sacrificial barrier between Al and the silicides.
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