Abstract
This paper investigates a relatively new photoresist MR-I 7010R for its use in thermal nanoimprint lithography. The primary aspects tested were the thickness of the photoresist post imprinting and uniformity of the resulting residual layer thickness (RLT). These aspects were determined with respect to the initial thickness of the photoresist, which was deposited via spin-on coating, and change in pressure. Uniformity of the RLT is critical to the effectiveness of the resist's use in thermal nanoimprint lithography as it determines the efficiency at which it can be etched. Imprinting with several conditions has been achieved with well acceptable residual layer to keep the stamp lifetime and efficiency of etching process.
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