Abstract
This paper proposes an analysis of the stress level affecting non-punch-through IGBTs featuring different threshold-voltage values during their operation in inverter applications. Experimental results are interpreted and complemented by electro-thermal simulation, employing a partially self-developed transistor model. The outcome of this study is that the threshold-voltage value is a good performance and reliability indicator for transistors operated in parallel.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
