Abstract
The potential of Electron Beam Induced Deposition (EBID) to become a reliable and reproducible direct-write nanopatterning technique has been investigated. A key requirement is that patterns of sub-20 nm dimension can be reproducibly fabricated and measured. EBID was used for the controlled fabrication of sub-20 nm dense lines on bulk silicon. To study the reproducibility of the fabrication process, a method for the quantitative measurement of line widths was developed. The line width of sub-20 nm EBID lines has been determined to be reproducible to within 1 nm. The parameters of importance and the challenges in achieving reproducibility, for performing EBID in standard SEM's, are discussed. • Line widths of EBID lines determined by dedicated edge detection technique. • The line width of sub-20 nm EBID lines is reproducible to within 1 nm. • EBID is a very reproducible direct nanopatterning technique.
Highlights
An important requirement for a lithography technique is that fabricated patterns are reproducible
In this work we address Electron Beam Induced Deposition (EBID) [1,2,3] and its potential as a reproducible novel lithography technique
Sub-20 nm dense EBID lines have been fabricated in the Scanning Electron Microscope (SEM) using the standard platinum precursor MeCpPtMe3
Summary
An important requirement for a lithography technique is that fabricated patterns are reproducible. When patterns of sub-10 nm dimension are needed other lithography techniques may become relevant, perhaps as a complementary technique to standard resist-based lithography To become successful such novel techniques have to be reproducible and reliable metrology techniques have to be available. Due to the versatility of EBID, it has been used for several applications such as the fabrication of electrodes, etch masks, nanorods, 3-dimensional, plasmonic and even superconducting nanostructures [11,12] Another great advantage is in the inherent ease of use and flexibility. A variety of materials can be deposited by the use of appropriate precursors [2] and being an inherently 3D technique, it enables the growth of structures in height It requires no resist or sample preparation. These properties make EBID potentially very attractive for high resolution lithography
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