Abstract
GaN quantum dots grown in ()’orientated AlN are studied. The -nucleated quantum dots exhibit rectangular- or trapezoid-based truncated pyramidal morphology. Another quantum dot type orientated on is reported. Based on high-resolution transmission microscopy and crystal symmetry, the geometry of -orientated quantum dots is proposed. A piezoelectric model is used within a finite element method to determine and compare the strain-state and electrostatic potential associated with the quantum dot morphology and an estimation of the band-edge energy is made. We report on some novel properties of the -orientated quantum dot, including mixed strain-states and strain-state bowing.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
