Abstract
We studied the morphological dependence of the initial GaN seed layers on in situ deposited Si x N y and its effect on the structural and electrical properties of GaN epilayers overgrown by low-pressure metalorganic chemical vapor deposition. Primarily scanning electron microscopy images were used for a systematic investigation of the effects of the growth parameters of Si x N y and GaN layers on the morphology of the initial GaN seed layers prior to overgrown layers. High-resolution X-ray diffraction measurements revealed that the full width at half maximum of (1 0 2) rocking curve decreased significantly from 8.4 to 4.6 arcmin as the chamber pressure was increased from 30 to 300 Torr for the growth of the 0.3 μm-thick initial GaN seed layer. Thermally activated carrier transport measurements in the overgrown GaN epilayers showed a V-shaped temperature-dependent electron concentration profile with a minimum at 80 K, the shape of which is attributed to a highly degenerate impurity band in the heavily silicon-doped GaN region at the GaN/Si x N y interface.
Published Version
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