Abstract
The preparation of films of ZnS by radio-frequency sputtering and also the doping with manganese by either co-sputtering or ion-beam implantation has been described. The brightness of ZnS: Mn films doped by both techniques have been compared. Also concentration quenching has been examined. In addition the conditions for preparing ZnS films on I.T.O. substrates which are free of pin-holes have been given. Space-charge limited currents, defined by thickness dependence, have been observed prior to the onset of electroluminescence. A brief description is presented also of the behaviour of d.c. pulsed devices of I.T.O./ZnS: Mn/Al devices during electroluminescent operation.
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