A study of the initial stages of the electrochemical deposition of thallium on copper, Part IV. The potential step results: Underpotential deposition on (111), (110) and (100) oriented copper single c

Abstract

The underpotential deposition and dissolution of thallium onto carefully chemically polished single crystal copper (111), (110) and (100) electrode surfaces from acetate, sulphate and perchlorate solutions have been investigated using single and double potential step techniques. It appeared that the different anions used did not change the current-time response characteristics significantly. Current-time responses to the potential steps applied strongly resemble those observed in the case of thallium underpotential deposition on silver single crystals [1]. The characteristics of i-t transients obtained by single potential step suggest very fast 2D crystal growth processes taking place. Sharp linear voltammetry peaks, which are observed for both thallium and lead deposition on Cu(111) [3,8] and on Ag(111) [1,3], probably always indicate nucleative phase formation processes but the rate of the lattice growth step will vary from system to system. Comparison of the obtained results with those for lead underpotential deposition [8-13] on Cu(111), (110) and (100) suggests that, in the present case, the rate of the 2D lattice building process for both thallium underpotential monolayers formed on three copper single crystal surfaces examined is so fast that it becomes controlled by diffusive processes; this will probably be surface diffusion [24,25] initially and, at longer times planar bulk diffusion. Double pulse experiments did not help significantly in attempts to obtain i-t transients capable of providing data suitable for showing conclusively the occurrence of 2D crystal formation processes. A similar situation occurred also with silver substrates [1].