Abstract
The relative electromigration performance of test structures with a common Ti/TiN–Al–1% Cu–TiN metallization scheme and with three different inter-metal–dielectric (IMD) layers is compared. Differences in lifetimes are observed which are attributable to the influences of the different IMD layers. The IMD layers in question are (a) polyimide, (b) a flexible inorganic dielectric layer, and (c) a rigid inorganic dielectric layer. A matrix of conventional electromigration tests has been carried out. The possible influence of stress migration is investigated and an explanation for the relative behaviour is proposed.
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