Abstract
Electrical and photoluminescence studies of MBE-grown Si delta-doped GaAs structures at a varied partial pressure ratio PAs/PGa =γ on substrates with (111)Ga orientation and misoriented toward the [2\(\bar 1\bar 1\)] direction have been performed. Hall effect measurements demonstrated that the conduction type changes from p to n on raising the As pressure (i.e., γ). The observed changes in the photoluminescence spectra are interpreted in terms of a kinetic approach based on different dangling bond densities on terraces and steps of the vicinal surface appearing on [2\(\bar 1\bar 1\)] substrates misoriented toward the [2\(\bar 1\bar 1\)] direction.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
