Abstract
Positron lifetime spectroscopy combined with a 50 V AC appliedsquare-wave bias has been used to probe the electric field in the 2 μmregion next to an Au/SI-GaAs contact. The electric fields spatially and timeaveraged over the reverse half-period at different temperatures (255–295 K) andpulsing periods (∼1 ms–10 ks) have been obtained using a numerical differentiationtechnique. It is found that within the temperature range studied, the electric fieldfirst increases as a function of time to a maximum of about 10 kV cm−1 and thendecreases, before finally saturating at the DC value of 7 kV cm−1. The increase ofthe electric field with time is attributed as previously to the electron emissionfrom the EL2 defect. The subsequent electric field decrease is associated with theonset of a thermally activated process with an energy barrier of 1.03 ± 0.15eV. This process, which causes the neutralization of the space charge region,may be tentatively attributed to the recombination centres EL5 or EL6.
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