A study of the effect of γ-radiation on the current-carrying mechanism in the P-CuTlS2 single crystal

Abstract

The electrical conductivity and volt–ampere characteristics (VAC) of the p-CuTlS2 single crystal with specific resistance [Formula: see text] and irradiated by [Formula: see text]-quantum were studied in the range of 100–300[Formula: see text]K temperature and 10–104[Formula: see text]V/cm. It was determined that the cause of the conduction disorder observed in the CuTlS2 single crystal at low electric fields and high radiation doses is the formation of defect clusters dominated by cation vacancies. A sharp increase in current at high electric fields and temperatures occurs as a result of thermo-field ionization of the acceptor level with activation energy [Formula: see text][Formula: see text]eV and the ionization voltage decreases with increasing radiation dose. Based on the determination of the parameters ([Formula: see text]) that determine the mechanism of current flow, the dependence of the shape of the potential hole on the radiation dose was determined.