Abstract
A theoretical analysis of thermostimulated conductivity spectra σTSC(T) has been applied to determine the density of gap states g(E) in a-Si: H and a-Si: H/a-SiNx: H multilayer structures. The results for g(E) are consistent with the results deduced from Fritzsche's analytical approach as well as other methods. A comparison has been made between the two different analytical approaches for σTSC(T). We discuss the relationship between the energy of maximum thermostimulated current emission Em and quasi-Fermi level Eq. We demonstrate that Eq could be a better parameter than Em in the general theoretical treatment of thermostimulated conductivity.
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