Abstract
Silicon carbonitride films are synthesized by plasma enhanced chemical vapor deposition from bis(trimethylsilyl)ethylamine and helium or ammonium mixtures. The structure of chemical bonds in the films is studied by X-ray photoelectron and IR spectroscopy. The data on the main types of bonds present in silicon carbonitride films deposited under different synthesis conditions are obtained. It is shown that the use of ammonia at a low deposition temperature provides the synthesis of films with a simultaneous formation of Si-C, Si-N, and C-N bonds. The main bonds in films obtained from a bis(trimethylsilyl)ethylamine and helium mixture are Si-C and Si-N. The chemical structure of films obtained at high synthesis temperatures is close to SiCx regardless of the type of the additional gas used.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
