Abstract
Surface step structures on Si(511) originating from an oxidation-induced stacking fault have been investigated by RHEED and LEED for the first time. Si(511) with oxidation-induced stacking faults showed only a streaky diffraction pattern in the [ 2 55] direction. Upon in-situ heat treatment at about 1000°C, an ordered (2×1) structure appeared on the surface instead of the Si(511)-3×1 structure normally observed for Si(511). This structural change with temperature is considered as being due to a partial recovery of disordered surface step structure formed on the recovered (100) terrace region of Si(511).
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