Abstract
Thermal annealing, oxidation, and impurity doping of room-temperature dc magnetron sputter deposited silicon films are examined. It was found that even with a fine grain structure, the films can be doped to the desired sheet resistances suitable for device applications, although the sheet resistances are higher (2 to 5 times) than those obtained from single crystal silicon. It was also found that pre-diffusion annealing decreases sheet resistance of boron-doped films, but increases the sheet resistance of phosphorus-doped films, this is correlated to the different behavior of boron and phosphorus at the grain boundaries. Oxidation rates are enhanced in both boron-doped and phosphorus doped films. Film thickness reductions of 11 to 31% after high temperature processes was observed. Effects of doping on the shrinkage in film thickness are presented.
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