Abstract
The process of plasma-chemical conversion of silicon tetrafluoride in a radiofrequency (13.56 MHz) discharge has been studied. The dependence of the yield of silicon on the specific energy input and the H2/SiF4 molar ratio has been examined in the pressure range of 0.1–0.3 Tort. The maximum yield of silicon is 60%, and the optimal specific energy consumption is 44.6 MJ per mole of Si. A mechanism has been proposed for the plasma-assisted reduction of silicon tetrafluoride under the given experimental conditions.
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