Abstract
The necessity for accurate values of the relative ratios between silicon-escape and corresponding photopeaks is essential in accurate PIXE and XRF trace element analysis. The intensity of the silicon escape peak as a function of the energy of the incident X-ray radiation, has been extensively measured and calculated, for Si(Li) crystals having few mm of thickness. The use of Si PIN photodiodes in X-ray detection, with thickness of a few hundreds of μm, makes necessary the reconsideration of the relative ratios between escape and parent peaks at least for those X-rays that can penetrate these crystals. In this case, escape of the SiKα characteristic X-ray produced near the rear side of the crystal is also possible and may have a sizeable effect. Theoretical calculations and experimental measurements of the SiKα escape peak intensity for two X-ray detectors having nominal thickness 3 mm and 0.3 mm respectively are compared.
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