Abstract
The InAlAs/InGaAs HEMT is a key electron device used in optoelectronic integrated circuits (OEICs) operating in the 1·3 and 1·5 μm optical wavelength ranges. OEIC performances can be degraded by side-gating effects associated with the HEMT. A side gate current is evidenced and demonstrated to be (i) due to a hole current induced by an impact ionization mechanism into the HEMT InGaAs channel and flowing through the InAlAs buffer layer and (ii) strongly dependent on the side gate test structure geometries and types of contacts. Finally, an optimized structure for monolithic integration is presented together with requirements on the operating point.
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