Abstract
Polycrystalline films of Cd1-xZnxTe (x = 0–0.4) and Cd1-xMnxTe (x = 0–0.25) were grown by MBE and MOCVD, respectively, on CdS/SnO2/glass substrates to investigate their feasibility for solar cell applications. The compositional uniformity and interface quality of the films were analyzed by x-ray diffraction, surface photovoltage, and Auger depth profile measurements to establish a correlation between growth conditions and lattice constant, atomic concentration, and bandgap of the ternary films. MBE-grown polycrystalline Cd1-xZnxTe films showed a linear dependence between Zn/(Cd + Zn) beam flux ratio, Zn concentration in the film, and the bandgap. Polycrystalline Cd1-xZnxTe films grown at 300° C showed good compositional uniformity in contrast to compositionally non-uniform Cd1-xMnxTe films grown by MOCVD in the temperature range of 420–450° C. The MBE-grown Cd1-xZnxTe interface also showed significantly less interdiffusion compared to the MOCVD-grown Cd1-xMnxTe/CdS interface, where preferential exchange between Cd from the CdS layer and Mn from the Cd1-xMnxTe film was observed. The compositional uniformity of MOCVD-grown polycrystalline Cd1-xMnxTe films grown on CdS/SnO2/glass substrates was found to be a strong function of the growth conditions as well as the Mn source.
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